G115 photoelectric switch
G115 photoelectric switch Principle of photoelectric switch The working principle of the photoelectric switch is that when the beam emitted by the emitter is blocked or partly reflected by the object,the beam receiver where by makes a judgment and reacts.
G115 photoelectric switch Principle of photoelectric switch The working principle of the photoelectric switch is that when the beam emitted by the emitter is blocked or partly reflected by the object,the beam receiver where by makes a judgment and reacts.
Model explanation of Photoelectric Sensor
1. G: Photoelectric sensor 2. Sub code No.(18, 50, 76.....) 3. Operating voltage(2: 90-250VAC ;3: 10-30VDC; 4: 12-240VDC/24-240VAC; 5: Special voltage) 4. Detection method( A: Diffuse type; B: Mirror reflex type; C: Through beam type) 5. Detection distance (05: 5cm ; 10: 10cm; 30: 30cm; 101: 10m) 6. Output method(N: NPN transistor output; P: PNP transistor output; J: Relay output; L: AC two-line output; S: NPN+PNP) 7. Output status(A: NO; B: NC; C: NO+NC) 8. Auxi function code(T1: Front delay; T2: Rear delay; Y: Oil proof; T: With connector; I: Special requirement)
Technical Parameters:
OVERALL DIMENSIONS Diffuse type Detection distance 10-30VDC NPN NO NC NO+NC PNP NO 90-250VAC NC NO+NC SCR Contro Hable silicon NO NC Relay output Retroreflective type Detection distance 10-30VDC NPN NO NC NO+NC PNP NO 90-250VAC NC NO+NC SCR Contro Hable silicon NO NC Relay output Through beam Detection distance 25mm 10-30VDC NPN NO G115-3E25NA NC G115-3E25NB NO+NC G115-3E25NC PNP NO G115-3E25PA 90-250VAC NC G115-3E25PB NO+NC G115-3E25PC SCR Contro Hable silicon NO NC Relay output DC/SCR Control output DC:200mA,AC:300mA,Relay:2A DC/AC Consumption current DC<15mA,AC<10mA DC/AC Response time Dc<2ms,AC<20ms Directional angle 3。 -10。 Detected object transparent or opaque body Working environment temperature 25℃~+55℃ Intensity of illumination of working environment Sunlight under 1000LX incandescent lamp under 3000LX Shell material Metal Protection grade IP54
Model explanation of Photoelectric Sensor
1. G: Photoelectric sensor 2. Sub code No.(18, 50, 76.....) 3. Operating voltage(2: 90-250VAC ;3: 10-30VDC; 4: 12-240VDC/24-240VAC; 5: Special voltage) 4. Detection method( A: Diffuse type; B: Mirror reflex type; C: Through beam type) 5. Detection distance (05: 5cm ; 10: 10cm; 30: 30cm; 101: 10m) 6. Output method(N: NPN transistor output; P: PNP transistor output; J: Relay output; L: AC two-line output; S: NPN+PNP) 7. Output status(A: NO; B: NC; C: NO+NC) 8. Auxi function code(T1: Front delay; T2: Rear delay; Y: Oil proof; T: With connector; I: Special requirement)
Technical Parameters:
OVERALL DIMENSIONS Diffuse type Detection distance 10-30VDC NPN NO NC NO+NC PNP NO 90-250VAC NC NO+NC SCR Contro Hable silicon NO NC Relay output Retroreflective type Detection distance 10-30VDC NPN NO NC NO+NC PNP NO 90-250VAC NC NO+NC SCR Contro Hable silicon NO NC Relay output Through beam Detection distance 25mm 10-30VDC NPN NO G115-3E25NA NC G115-3E25NB NO+NC G115-3E25NC PNP NO G115-3E25PA 90-250VAC NC G115-3E25PB NO+NC G115-3E25PC SCR Contro Hable silicon NO NC Relay output DC/SCR Control output DC:200mA,AC:300mA,Relay:2A DC/AC Consumption current DC<15mA,AC<10mA DC/AC Response time Dc<2ms,AC<20ms Directional angle 3。 -10。 Detected object transparent or opaque body Working environment temperature 25℃~+55℃ Intensity of illumination of working environment Sunlight under 1000LX incandescent lamp under 3000LX Shell material Metal Protection grade IP54