G55 photoelectric switch Principle of photoelectric switch The working principle of the photoelectric switch is that when the beam emitted by the emitter is blocked or partly reflected by the object,the beam receiver where by makes a judgment and reacts.
G55 photoelectric switch Principle of photoelectric switch The working principle of the photoelectric switch is that when the beam emitted by the emitter is blocked or partly reflected by the object,the beam receiver where by makes a judgment and reacts.
Model explanation of Photoelectric Sensor
1. G: Photoelectric sensor 2. Sub code No.(18, 50, 76.....) 3. Operating voltage(2: 90-250VAC ;3: 10-30VDC; 4: 12-240VDC/24-240VAC; 5: Special voltage) 4. Detection method( A: Diffuse type; B: Mirror reflex type; C: Through beam type) 5. Detection distance (05: 5cm ; 10: 10cm; 30: 30cm; 101: 10m) 6. Output method(N: NPN transistor output; P: PNP transistor output; J: Relay output; L: AC two-line output; S: NPN+PNP) 7. Output status(A: NO; B: NC; C: NO+NC) 8. Auxi function code(T1: Front delay; T2: Rear delay; Y: Oil proof; T: With connector; I: Special requirement)
Technical Parameters:
OVERALL DIMENSIONS Diffuse type Detection distance 20cm 10-30VDC NPN NO G55-3A20NA NC G55-3A20NB NO+NC G55-3A20NC PNP NO G55-3A20PA 90-250VAC NC G55-3A20PB NO+NC G55-3A20PC SCR Contro Hable silicon NO NC Relay output Retroreflective type Detection distance 2m 10-30VDC NPN NO G55-3B2NA NC G55-3B2NB NO+NC G55-3B2NC PNP NO G55-3B2PA 90-250VAC NC G55-3B2PB NO+NC G55-3B2PC SCR Contro Hable silicon NO NC Relay output Through beam Detection distance 4m 10-30VDC NPN NO G55-3C4NA NC G55-3C4NB NO+NC PNP NO G55-3C4PA 90-250VAC NC G55-3C4PB NO+NC SCR Contro Hable silicon NO NC Relay output DC/SCR Control output DC:200mA DC/AC Consumption current DC<15mA,AC<10mA DC/AC Response time AC/Dc<2ms Directional angle 3。 -10。 Detected object transparent or opaque body Working environment temperature 25℃~+55℃ Intensity of illumination of working environment Sunlight under 1000LX incandescent lamp under 3000LX Shell material Metal Protection grade IP54
Model explanation of Photoelectric Sensor
1. G: Photoelectric sensor 2. Sub code No.(18, 50, 76.....) 3. Operating voltage(2: 90-250VAC ;3: 10-30VDC; 4: 12-240VDC/24-240VAC; 5: Special voltage) 4. Detection method( A: Diffuse type; B: Mirror reflex type; C: Through beam type) 5. Detection distance (05: 5cm ; 10: 10cm; 30: 30cm; 101: 10m) 6. Output method(N: NPN transistor output; P: PNP transistor output; J: Relay output; L: AC two-line output; S: NPN+PNP) 7. Output status(A: NO; B: NC; C: NO+NC) 8. Auxi function code(T1: Front delay; T2: Rear delay; Y: Oil proof; T: With connector; I: Special requirement)
Technical Parameters:
OVERALL DIMENSIONS Diffuse type Detection distance 20cm 10-30VDC NPN NO G55-3A20NA NC G55-3A20NB NO+NC G55-3A20NC PNP NO G55-3A20PA 90-250VAC NC G55-3A20PB NO+NC G55-3A20PC SCR Contro Hable silicon NO NC Relay output Retroreflective type Detection distance 2m 10-30VDC NPN NO G55-3B2NA NC G55-3B2NB NO+NC G55-3B2NC PNP NO G55-3B2PA 90-250VAC NC G55-3B2PB NO+NC G55-3B2PC SCR Contro Hable silicon NO NC Relay output Through beam Detection distance 4m 10-30VDC NPN NO G55-3C4NA NC G55-3C4NB NO+NC PNP NO G55-3C4PA 90-250VAC NC G55-3C4PB NO+NC SCR Contro Hable silicon NO NC Relay output DC/SCR Control output DC:200mA DC/AC Consumption current DC<15mA,AC<10mA DC/AC Response time AC/Dc<2ms Directional angle 3。 -10。 Detected object transparent or opaque body Working environment temperature 25℃~+55℃ Intensity of illumination of working environment Sunlight under 1000LX incandescent lamp under 3000LX Shell material Metal Protection grade IP54