SiC MOSFET modules, including 650V 60A module, 1200V 20A/40/450A module, 1700V 25A/200A/225A module. The silicon carbide power module is based on chip products, according to customer needs, multi-chip
PCsemic is committed to the R&D of wide bandgap semiconductors, advanced driving and protection, next-generation energy conversion and renewable energy/zero emission technologies. At present, our product line covers power semiconductors, both discrete and modules, gate drivers with built-in isolation and protection, power supply modules, digital energy solutions, and smart grid solutions.
As a Sister company of Rockwill Electric Group, PCsemic's silicon carbide power module is based on chip products, according to customer needs, multi-chip combination integration of functional components, has a very rich variety of changes, can be integrated close to customer needs, to solve customer application problems. At present, Chongqing Pingchuen has developed and pre-developed many SiC MOSFET modules, including 650V 60A module, 1200V 20A/40/450A module, 1700V 25A/200A/225A module.
Technical Data
Product | Blocking Voltage/V | Current Rating /A | RDS(on) /mΩ | Total Gate Charge /nC | Vgs/V | Total Power Dissipation /W |
PMM300FF120GAF1SG | 1200V | 300A | 4.2mΩ | 966nC | 3V | 750W |
PMM612FF120GAG1SG | 1200V | 612A | 2.17mΩ | 1560nC | 2.5V | 791W |
PMM400HF120GAF4SG | 1200V | 400A | 3.3mΩ | 940nC | 2.4V | 2884W |
PMM800HF120GAF4SG | 1200V | 800A | 1.63mΩ | 1880nC | 2.4V | 5555W |
PMM50N120GAA1SG | 1200V | 50A | 40mΩ | 120nC | 5.6V | 222W |
PMM250HF170GAA6SG | 1700V | 250A | 8.3mΩ | 1272nC | 2.8V | —— |
PMM300HF170GAA6SG | 1700V | 300A | 7.5mΩ | 942nC | 3.1V | 1453W |