SiC Schottky Barrier Diodes SBD

SiC Schottky barrier diodes (SiC SBD) have a small total charge (Qc), low switching loss and high switching speed. Therefore, it is widely used in PFC circuit of power supply. In addition, unlike silicon based fast recovery diodes, whose TRR (reverse recovery time) increases with temperature, silicon carbide (SiC) devices maintain constant characteristics, thereby improving circuit performance. Manufacturers can reduce the size of industrial equipment and consumer electronics, ideal for use in power factor correction circuits and inverters. SiC SBDs are used to improve the reliability of power conversion systems, such as battery charging, charging circuits for electric and hybrid vehicles, and solar panels. The low heating characteristics of silicon carbide also enable manufacturers to reduce the overall size of power systems.

Technical Data